Display apparatus and method of manufacturing the same, the method including depositing different electrode portions by moving a mask

ABSTRACT

A display apparatus is described that includes a substrate having a display area and a sensor area, wherein the sensor area includes a transmission area; a plurality of first opposite electrodes arranged to correspond to the display area; and a plurality of second opposite electrodes arranged to correspond to the sensor area and surround the transmission area, wherein a shape of each of the plurality of first opposite electrodes is different from a shape of each of the plurality of second opposite electrodes.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit of Korean Patent Application No.10-2019-0062053, filed on May 27, 2019, in the Korean IntellectualProperty Office, and is a divisional of U.S. patent application Ser. No.16/861,902, filed on Apr. 29, 2020. The disclosures of these relatedapplications are incorporated by reference in their entirety.

BACKGROUND 1. Field

One or more embodiments relate to a display apparatus and a method ofmanufacturing the same.

2. Description of Related Art

Display devices are found in televisions, computers, mobile electronics,and automobiles, among other examples. Usage of display devices hasdiversified to include many different settings, leading to increaseddemand for thinner and lighter displays. However, smaller designs maycontribute to a reduction in light transmittance of a display.

Despite the ever-shrinking design of display devices, it is desirable toachieve a high light transmittance. A high light transmittance maycorrespond to higher quality images, clearer images, and more detailedimages. Therefore, there is a need in the art for a high lighttransmittance and high quality of display apparatuses for use in thinnerand lighter displays.

SUMMARY

One or more embodiments include a display apparatus for displaying animage and including a sensor area in which sensors are arranged.However, this objective is an example, and the scope of the disclosureis not limited thereto.

Additional aspects will be set forth in part in the description whichfollows and, in part, will be apparent from the description, or may belearned by practice of the presented embodiments of the disclosure.

According to one or more embodiments, a display apparatus includes: asubstrate including a display area, and a sensor area, the sensor areaincluding a transmission area; a plurality of first opposite electrodesarranged to correspond to the display area; and a plurality of secondopposite electrodes arranged to correspond to the sensor area andsurround the transmission area, wherein a shape of each of the pluralityof first opposite electrodes is different from a shape of each of theplurality of second opposite electrodes.

Each of the plurality of first opposite electrodes may have the shape ofa first quadrangle with a first width in a first direction, and each ofthe plurality of second opposite electrodes may have the shape of asecond quadrangle with a second width in the first direction, whereinprojections project from four vertexes of the second quadrangle. Thefirst width may be greater than the second width.

First opposite electrodes adjacent to each other in the first direction,from among the plurality of first opposite electrodes, may overlap eachother at an edge of the first quadrangle, and second opposite electrodesadjacent to each other along an edge of the transmission area, fromamong the plurality of second opposite electrodes, may overlap eachother at the projections.

First opposite electrodes adjacent to each other in a second directioncrossing the first direction, from among the plurality of first oppositeelectrodes, may be arranged to be apart from each other.

The display apparatus may further include a plurality of third oppositeelectrodes between the plurality of first opposite electrodes and theplurality of second opposite electrodes, wherein an area of each of theplurality of third opposite electrodes is greater than an area of eachof the plurality of first opposite electrodes.

Each of the plurality of first opposite electrodes may have a shape of afirst quadrangle with a first width in a first direction, each of theplurality of third opposite electrodes may have a shape of a thirdquadrangle with a third width in the first direction, and the firstwidth and the third width may be substantially the same as each other.

A plurality of main pixels may be included in the display area, aplurality of auxiliary pixels may be included in the sensor area, andthe number of the main pixels covered by each of the plurality of firstopposite electrodes may be the same as the number of the auxiliarypixels covered by each of the plurality of second opposite electrodes.

A plurality of main pixels may be included in the display area, aplurality of auxiliary pixels may be included in the sensor area, andthe number of the main pixels covered by each of the plurality of firstopposite electrodes may be twice the number of the auxiliary pixelscovered by each of the plurality of second opposite electrodes.

A length of each of the plurality of first opposite electrodes in asecond direction may be 1.8 to 2 times a length of each of the pluralityof second opposite electrodes in the second direction.

An area of an area of the transmission area may be greater than an areaof an emission area of an auxiliary pixel arranged in the sensor area.The transmission area may include a first transmission area and a secondtransmission area, and the first transmission area may have a differentsize from the second transmission area. A width of the transmission areain a first direction may be greater than a width of each of theplurality of second opposite electrodes in the first direction.

The substrate may further include a power supply line arranged in anon-display area outside the display area, and one or more of theplurality of first opposite electrodes and one or more of the pluralityof second opposite electrodes may be arranged to overlap the powersupply line.

The display apparatus may further include a component arranged tocorrespond to a lower portion of the sensor area. An auxiliary thin-filmtransistor may be arranged in the sensor area, and a lower metal layermay be arranged between the substrate and the auxiliary thin-filmtransistor.

According to one or more embodiments, a method of manufacturing adisplay apparatus including a display area, and a sensor area, whereinthe sensor area includes a transmission area includes: aligning a maskto correspond to a substrate; performing a first operation of depositinga portion of an opposite electrode on the substrate using the mask; andperforming a second operation of depositing another portion of theopposite electrode by moving the mask in a first direction and a seconddirection crossing the first direction.

The mask may include first mask openings and second mask openings, and ashape of each of the first mask openings may be different from a shapeof each of the second mask openings.

Each of the first mask openings may have the shape of a first quadranglewith a first width, and each of the second mask openings may have theshape of a second quadrangle with a second width, wherein the secondquadrangle has an expansion hole extending from each of four vertexes ofthe second quadrangle.

The mask may include third mask openings between first mask openings andsecond mask openings, and an area of each of the third mask openings maybe greater than an area of each of the first mask openings.

The first mask openings may be arranged to be apart from each other by afirst distance in the second direction, and the second mask openings maybe arranged to be apart from each other by a second distance in thesecond direction, wherein the first distance is less than the seconddistance. The second distance may be about 5 to 10 times the firstdistance.

According to one or more embodiments, a display apparatus includes: asubstrate including a display area and a non-display area around thedisplay area; an opposite electrode arranged to correspond to thedisplay area; and a power supply line arranged in the non-display area,wherein the opposite electrode extends to the non-display area tooverlap the power supply line, and a side of the opposite electrodeincludes partially projecting exterior patterns.

The opposite electrode may include a plurality of first oppositeelectrodes and a plurality of second opposite electrodes, wherein firstopposite electrodes adjacent to each other in a first direction, fromamong the plurality of first opposite electrodes, may overlap eachother, and the plurality of first opposite electrodes may have adifferent shape or a different size from the plurality of secondopposite electrodes.

Some of the exterior patterns may have the same shape as the pluralityof first opposite electrodes and the others of the exterior patterns mayhave the same shape as the plurality of second opposite electrodes.

The display apparatus may further include: a planarization layerarranged on the power supply line and including a contact hole exposinga portion of the power supply line; and a connection wire arranged onthe planarization layer and connected to the power supply line throughthe contact hole, wherein the opposite electrode contacts the connectionwire.

The substrate may further include a sensor area including a transmissionarea, and a distance by which exterior patterns arranged outside thesensor area, from among the exterior patterns, are apart from each othermay be greater than a distance by which exterior patterns arrangedoutside the display area, from among the exterior patterns, are apartfrom each other.

According to one or more embodiments, a display apparatus comprises asubstrate including a display area and a sensor area with respect to aplan view, the sensor area including at least one transmission area; aplurality of first opposite electrodes having a first shape andoverlapping the display area in the plan view; and a plurality of secondopposite electrodes having a second shape different from the first shapeand overlapping the sensor area in the plan view, wherein the at leastone transmission area borders the plurality of second oppositeelectrodes on at least two opposite sides in the plan view.

In some examples, the second shape comprises a rectangle with a notch oneach side, and wherein the notch on at least one side of at least two ofthe plurality of second opposite electrodes borders the at least onetransmission area in the plan view, wherein a portion of thetransmission area corresponds to the notch on at least one side of theat least two of the plurality of second opposite electrodes.

In some examples the display apparatus further comprises a plurality ofthird opposite electrodes having a third shape, wherein each of theplurality of third opposite electrodes borders a boundary between thedisplay area and the sensor area in the plan view and overlaps at leastone of the plurality of first opposite electrodes or at least one of theplurality of second opposite electrodes.

BRIEF DESCRIPTION OF THE DRAWINGS

A display apparatus having various functions and improved quality isprovided. The display apparatus, the pixel portion, and the transmissionarea provide for improved light transmittance and may be arranged in thesensor area SA corresponding to the component

The above and other aspects, features, and advantages of certainembodiments of the disclosure will be more apparent from the followingdescription taken in conjunction with the accompanying drawings, inwhich:

FIG. 1 is a perspective view schematically illustrating a displayapparatus according to an embodiment;

FIG. 2 is a cross-sectional view simply illustrating a display apparatusaccording to embodiments;

FIG. 3 is a plan view schematically illustrating a display panelaccording to an embodiment;

FIG. 4A is an equivalent circuit diagram of an active matrix pixel whichmay be arranged in a display area of a display apparatus according to anembodiment;

FIG. 4B is an equivalent circuit diagram of an active matrix pixel whichmay be arranged in a display area of a display apparatus according toanother embodiment;

FIGS. 5 and 6 are schematic plan views corresponding to region B of FIG.3 ;

FIG. 7 is a schematic cross-sectional view of the display apparatustaken along line I-I′ of FIG. 5 ;

FIG. 8 is a schematic cross-sectional view of the display apparatustaken along lines II-II′ and III-III′ of FIG. 5 ;

FIG. 9 is a cross-sectional view schematically illustrating a displayapparatus according to another embodiment;

FIG. 10 is a cross-sectional view schematically illustrating a displayapparatus according to another embodiment;

FIG. 11 illustrates an example of a mask for forming an oppositeelectrode according to embodiments;

FIGS. 12A and 12B illustrate a method of manufacturing a displayapparatus, according to an embodiment;

FIG. 13 is a plan view schematically illustrating a display apparatusaccording to another embodiment;

FIG. 14 is an enlarged view of region C of FIG. 13 ;

FIG. 15 is a schematic cross-sectional view of the display apparatustaken along line IV-IV′ of FIG. 14 ;

FIG. 16 is a schematic plan view of a portion of a display apparatusaccording to another embodiment;

FIG. 17 illustrates another example of a mask for forming an oppositeelectrode according to embodiments; and

FIG. 18 is a plan view of a portion of a display panel according toanother embodiment.

DETAILED DESCRIPTION

While various modifications may be made to and numerous embodiments maybe included in the disclosure, embodiments of the disclosure are shownby way of example in the drawings and are herein described in detail.Effects and characteristics of the disclosure and the methods ofachieving the effects and the characteristics will be clearly shown withreference to the embodiments described in detail below, together withthe drawings. However, the disclosure is not limited to the embodimentsdescribed herein and may be realized in various forms.

Hereinafter, the embodiments of the disclosure will be described indetail with reference to the accompanying drawings. In the descriptions,like reference numerals refer to the like elements and the samedescriptions will not be repeated.

It will be understood that the terms “first,” “second,” etc. may be usedherein to describe various components; these components should not belimited by these terms. These components are used to distinguish onecomponent from another.

As used herein, the singular forms “a,” “an,” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise.

It will be further understood that the terms “comprises” and/or“comprising” used herein specify the presence of stated features orcomponents, but do not preclude the presence or addition of one or moreother features or components.

It will be understood that when a layer, area, or component is referredto as being “formed on,” another layer, area, or component, the layer,area, or component can be directly or indirectly formed on the otherlayer, area, or component. For example, intervening layers, areas, orcomponents may be present.

The sizes of elements in the drawings may be exaggerated for convenienceof explanation. In other words, since sizes and thicknesses ofcomponents in the drawings are arbitrarily illustrated for convenienceof explanation, the following embodiments are not limited thereto.

When a certain embodiment may be implemented differently, a processorder may be performed differently from the described order. Forexample, two consecutively described processes may be performedsubstantially at the same time or performed in an order opposite to thedescribed order.

In the embodiments hereinafter, it will be understood that when anelement, an area, or a layer is referred to as being connected toanother element, area, or layer, the element, area, or layer can bedirectly or indirectly connected to the other element, area, or layer.For example, it will be understood in this specification that when anelement, an area, or a layer is referred to as being in contact with orbeing electrically connected to another element, area, or layer, theelement, area, or layer can be directly or indirectly in contact with orelectrically connected to the other element, area, or layer.

FIG. 1 is a perspective view schematically illustrating a displayapparatus 1 according to an embodiment.

Referring to FIG. 1 , the display apparatus 1 may include a display areaDA for realizing an image and a non-display area NDA not for realizingan image. The display apparatus 1 may provide a main image by usingpieces of light emitted from a plurality of main pixels Pm arranged inthe display area DA.

The display apparatus 1 may include a sensor area SA. A sensor area SAmay be an area under which a component where a sensor may exist. Thesensor may use infrared rays, visible rays, sound, or the like, which isdescribed below with reference to FIG. 2 . The sensor area SA mayinclude a transmission area TA through which light or sound output fromthe component to the outside or proceeding from the outside toward thecomponent may be transmitted. According to an embodiment, when infraredrays are transmitted through the sensor area SA, a light transmittancemay be equal to or greater than about 30%. The light transmittance maybe equal to or greater than about 50%, about 75%, about 80%, about 85%,or about 90%.

According to the present embodiment, a plurality of auxiliary pixels Pamay be arranged in the sensor area SA. A certain image may then beprovided by using light emitted from the plurality of auxiliary pixelsPa. The image provided in the sensor area SA may be a sub-image and mayhave a lower resolution than an image provided by the display area DA.For example, because the sensor area SA includes a transmission area TAthrough which the light and/or the sound may be transmitted, the numberof auxiliary pixels Pa, which may be arranged per unit area in thesensor area SA, may be smaller than the number of main pixels Pm. Themain pixels Pm may be arranged per unit area in the display area DA.

The sensor area SA may be disposed at a side of the display area DA.According to an embodiment, FIG. 1 illustrates that the sensor area SAis disposed at an upper side of the display area DA. Additionally, thesensor area SA is disposed between the non-display area NDA and thedisplay area DA.

Hereinafter, an organic light-emitting display apparatus is described asan example of the display apparatus 1 according to an embodiment.However, display apparatuses, according to embodiments, are not limitedthereto. According to another embodiment, various types of displayapparatuses may be used, such as an inorganic light-emitting displayapparatus, a quantum dot light-emitting display apparatus, etc.

FIG. 1 illustrates that the sensor area SA is arranged at the upper sideof the display area DA, having a quadrangular shape. However,embodiments are not limited thereto. The display area DA may have acircular shape, an oval shape, or a polygonal shape. A polygonal shapemay include, but not limited to, a triangular shape or a pentagonalshape. A location of the sensor area SA and the number of sensor areasSA may be variously modified.

FIG. 2 is a cross-sectional view simply illustrating the displayapparatus 1 according to embodiments and may correspond to across-section taken along line A-A′ of FIG. 1 .

Referring to FIG. 2 , the display apparatus 1 may include a displaypanel 10 including a display element, and a component 20 correspondingto the sensor area SA.

The display panel 10 may include a substrate 100, a display elementlayer 200 arranged on the substrate 100, and a thin-film encapsulationlayer 300. The thin-film encapsulation layer 300 is an encapsulationmember, encapsulating the display element layer 200. Also, the displaypanel 10 may further include a lower protective film 175 arranged underthe substrate 100, and a lower covering layer 185.

The substrate 100 may include glass or polymer resins. The polymerresins may include polyethersulfone (PES), polyacrylate, polyetherimide(PEI), polyethylene n naphthalate (PEN), polyethylene terephthalate(PET), polyphenylene sulfide (PPS), polyarylate, polyimide (PI),polycarbonate (PC), cellulose acetate propionate (CAP), or the like. Thesubstrate 100, including the polymer resins, may have the flexible,rollable, or bendable characteristics. The substrate 100 may have amulti-layered structure including a layer including the polymer resinsdescribed above and an inorganic layer (not shown).

The display element layer 200 may include a circuit layer includingthin-film transistors TFT and TFT′, an organic light-emitting diode OLEDas a display element, and insulating layers IL and IL′ between the mainand auxiliary thin-film transistors TFT and TFT′ and the organiclight-emitting diode OLED.

The main pixel Pm may be arranged in the display area DA. The main pixelPm includes the main thin-film transistor TFT and the organiclight-emitting diode OLED connected to the main thin-film transistorTFT. The auxiliary pixel Pa may be arranged in the sensor area SA. Theauxiliary pixel Pa may include the auxiliary thin-film transistor TFT′and the organic light-emitting diode OLED connected to the auxiliarythin-film transistor TFT′.

Also, the transmission area TA in which the auxiliary thin-filmtransistor TFT′ and the display element are not arranged may be disposedin the sensor area SA. The transmission area TA may be an area throughwhich the light/signal emitted from the component 20 or the light/signalincident into the component 20 is transmitted.

The component 20 may be located in the sensor area SA. The component 20may include an electronic element using light or sound. For example, thecomponent 20 may include a sensor configured to receive and use light, asensor configured to output and sense light or sound, a small-sized lampconfigured to output light, a speaker configured to output sound, or thelike. A sensor configured to receive and use light may include aninfrared sensor. A sensor configured to output and sense light or soundmay be used to measure a distance, or recognize a fingerprint, or thelike. The electronic element using light may use lights of variouswavelength ranges, such as visible rays, infrared rays, ultravioletrays, etc. The component 20 arranged in the sensor area SA may beprovided in a multiple number. For example, the component 20 may be alight-emission device and a light-reception device and may be providedtogether in the sensor area SA. Alternatively, a light-emission portionand a light-reception portion may be simultaneously included in thecomponent 20.

A lower metal layer BSM may be arranged in the sensor area SA. The lowermetal layer BSM may be arranged to correspond to a lower portion of theauxiliary thin-film transistor TFT′. The lower metal layer BSM mayprevent external light from reaching the auxiliary pixel Pa includingthe auxiliary thin-film transistor TFT′, etc. For example, the lowermetal layer BSM may prevent the light emitted from the component 20 fromreaching the auxiliary pixel Pa, or vice versa (i.e., it may prevent thelight emitted from the auxiliary pixel Pa from reaching the component20).

In some embodiments, a constant voltage or a signal may be applied tothe lower metal layer BSM to prevent damage to a pixel circuit caused byan electrostatic discharge.

The thin-film encapsulation layer 300 may include at least one inorganicencapsulation layer and at least one organic encapsulation layer. Withrespect to this aspect, FIG. 2 illustrates first and second inorganicencapsulation layers 310 and 330 and an organic encapsulation layer 320therebetween.

The first inorganic encapsulation 310 and the second inorganicencapsulation layer 330 may include one or more inorganic insulatingmaterials such as, but are not limited to, aluminum oxide, titaniumoxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, siliconnitride, and silicon oxynitride. The organic encapsulation layer 320 mayinclude a polymer-based material. The polymer-based material may includeacryl-based resins, epoxy-based resins, PI, and polyethylene.

The lower protective film 175 may be coupled under the substrate 100 tosupport and protect the substrate 100. The lower protective film 175 mayinclude a material having a higher transmittance of light. The lowerprotective film 175 may include PET or PI.

The lower covering layer 185 may further be provided under the lowerprotective film 175. The lower covering layer 185 may include an opening185OP corresponding to the sensor area SA. The lower covering layer 185may include the opening 185OP to improve the light transmittance of thesensor area SA. The lower covering layer 185 may include alight-blocking material. Accordingly, external light which may betransmitted through a lower surface of the substrate 100 may be blocked.

The sensor area SA may have a greater area than an area in which thecomponent 20 is arranged. Thus, an area of the opening 185OP provided inthe lower covering layer 185 may not correspond to an area of the sensorarea SA. For example, the area of the opening 185OP may be less than thearea of the sensor area SA.

Also, a plurality of component 20 may be arranged in the sensor area SA.The plurality of component 20 may have different functions from oneanother.

Although not shown, a touch sensing member, a reflection preventingmember, and a transparent window may further be arranged on the displaypanel 10. The touch sensing member may sense a touch input. Thereflection preventing member may include a polarizer and a retarder, ora color filter and a black matrix.

According to the present embodiment, it is illustrated that thethin-film encapsulation layer 300 is used as an encapsulation member forencapsulating the display element layer 200. However, embodiments arelimited thereto. For example, as the member for encapsulating thedisplay element layer 200, an encapsulation substrate coupled to thesubstrate 100 by a sealant or frit may also be used.

FIG. 3 is a plan view schematically illustrating the display panel 10according to an embodiment.

Referring to FIG. 3 , the display panel 10 may be disposed in thedisplay area DA and may include a plurality of main pixels Pm. Each ofthe main pixels Pm may include a display element, such as an organiclight-emitting diode OLED. Each main pixel Pm may emit, for example,red, green, blue, or white light through the organic light-emittingdiode OLED. In this specification, the main pixel Pm may be a sub-pixelemitting any of red light, green light, blue light, and white light asdescribed above. The display area DA may be covered by the encapsulationmember described above with reference to FIG. 2 and may be protectedfrom external materials, moisture, etc.

The sensor area SA may be disposed at a side of the display area DA, anda plurality of auxiliary pixels Pa may be arranged in the sensor areaSA. Each of the auxiliary pixels Pa may include a display element, suchas an organic light-emitting diode OLED. Each auxiliary pixel Pa mayemit, for example, red, green, blue, or white light through the organiclight-emitting diode OLED. In this specification, the auxiliary pixel Pamay be a sub-pixel emitting any of red light, green light, blue light,and white light, as described above. The transmission area TA may bedisposed between the auxiliary pixels Pa in the sensor area SA. At leastone component 20 may be arranged to correspond to a lower portion of thesensor area SA of the display panel 10.

According to an embodiment, one main pixel Pm and one auxiliary pixel Pamay include the same pixel circuit. However, embodiments are not limitedthereto. A pixel circuit included in the main pixel Pm and a pixelcircuit included in the auxiliary pixel Pa may be different from eachother.

Because the sensor area SA includes the transmission area TA, theresolution of the sensor area SA may be lower than the resolution of thedisplay area DA. For example, the resolution of the sensor area SA maybe about a half of the resolution of the display area DA. In someembodiments, the resolution of the display area DA may be equal to orgreater than about 400 ppi, and the resolution of the sensor area SA maybe equal to or greater than about 200 ppi.

Each of the main pixels Pm and the auxiliary pixels Pa may beelectrically connected to outer circuits arranged in the non-displayarea NDA. A first scan driving circuit 110, a second scan drivingcircuit 120, a terminal 140, a data driving circuit 150, a first powersupply line 160, and a second power supply line 170 may be arranged inthe non-display area NDA.

The first scan driving circuit 110 may provide a scan signal to each ofthe main pixels Pm and the auxiliary pixels Pa through a scan line SL.The first scan driving circuit 110 may provide an emission controlsignal to each of the main pixels Pm and the auxiliary pixels Pa throughan emission control line EL. The second scan driving circuit 120 may bearranged in parallel with the first scan driving circuit 110 with thedisplay area DA therebetween. Some of the main pixels Pm arranged in thedisplay area DA may be electrically connected to the first scan drivingcircuit 110. Others of the main pixels Pm arranged in the display areaDA may be electrically connected to the second scan driving circuit 120.For example, main pixels Pm may alternate between those that connect tothe first scan driving circuit 110 and those that connect to the secondscan driving circuit 120. Other connecting patterns may also be used.According to another embodiment, the second scan driving circuit 120 maybe omitted.

Terminal 140 may be arranged at a side of the substrate 100. Theterminal 140 may not be covered by an insulating layer. Additionally,the terminal 140 may be exposed and may be electrically connected to aprinted circuit board PCB. A terminal PCB-P of the printed circuit boardPCB may be electrically connected to the terminal 140 of the displaypanel 10. The printed circuit board PCB may transmit a signal or powerof a control portion (not shown) to the display panel 10. A controlsignal generated in the control portion may be transmitted to each ofthe first and second scan driving circuits 110 and 120 through theprinted circuit board PCB. The control portion may provide a first powervoltage ELVDD (or a driving voltage) and a second power voltage ELVSS(or a common voltage) (refer to FIGS. 4A and 4B below) to the firstpower supply line 160 and the second power supply line 170,respectively, through first and second connection wires 161 and 171. Thefirst power voltage ELVDD (or a driving voltage) may be provided to eachof the main pixels Pm and the auxiliary pixels Pa through a drivingvoltage line PL connected to the first power supply line 160. The secondpower voltage ELVSS (or a common voltage) may be provided to an oppositeelectrode of each of the main pixels Pm and the auxiliary pixels Paconnected to the second power supply line 170.

The data driving circuit 150 may be electrically connected to a dataline DL. A data signal of the data driving circuit 150 may be providedto each of the main pixels Pm and the auxiliary pixels Pa. The datasignal is provided through a connection wire 151 connected to theterminal 140 and the data line DL connected to the connection wire 151.FIG. 3 illustrates that the data driving circuit 150 is arranged in theprinted circuit board PCB. However, according to another embodiment, thedata driving circuit 150 may be arranged on the substrate 100. Forexample, the data driving circuit 150 may be arranged between theterminal 140 and the first power supply line 160.

The first power supply line 160 may include a first sub-line 162 and asecond sub-line 163 extending in parallel with each other in anx-direction with the display area DA therebetween. The second powersupply line 170 may have a loop shape with one open side and maypartially surround the display area DA.

FIGS. 4A and 4B are equivalent circuit diagrams of a main pixel Pmand/or an auxiliary pixel Pa which may be included in a display panelaccording to an embodiment.

Referring to FIG. 4A, each of the main pixels Pm and the auxiliarypixels Pa may include a pixel circuit PC connected to a scan line SL anda data line DL and an organic light-emitting diode OLED connected to thepixel circuit PC.

The pixel circuit PC may include a driving thin-film transistor T1, aswitching thin-film transistor T2, and a storage capacitor Cst. Theswitching thin-film transistor T2 may be connected to the scan line SLand the data line DL. The switching thin-film transistor T2 may transmita data signal Dm provided through the data line DL to the drivingthin-film transistor T1, in response to a scan signal Sn providedthrough the scan line SL.

The storage capacitor Cst may be connected to the switching thin-filmtransistor T2 and a driving voltage line PL. The storage capacitor Cstmay store a voltage corresponding to a difference between a voltagereceived from the switching thin-film transistor T2 and a first powervoltage ELVDD (or a driving voltage) supplied to the driving voltageline PL.

The driving thin-film transistor T1 may be connected to the drivingvoltage line PL and the storage capacitor Cst. Also, the drivingthin-film transistor T1 may control a driving current flowing from thedriving voltage line PL through the organic light-emitting diode OLED,in correspondence with a voltage value stored in the storage capacitorCst. The organic light-emitting diode OLED may emit light having acertain brightness, based on the driving current.

It is described in FIG. 4A that the pixel circuit PC includes twothin-film transistors and one storage capacitor. However, embodimentsare not limited thereto. As illustrated in FIG. 4B, the pixel circuit PCmay include seven thin-film transistors and one storage capacitor.

Referring to FIG. 4B, each of the main pixels Pm and the auxiliarypixels Pa may include a pixel circuit PC and an organic light-emittingdiode OLED connected to the pixel circuit PC. The pixel circuit PC mayinclude a plurality of thin-film transistors and a storage capacitor.The thin-film transistors and the storage capacitor may be connected tosignal lines SL, SL−1, EL, and DL, an initialization voltage line VL,and a driving voltage line PL.

FIG. 4B illustrates that each of the main pixels Pm and the auxiliarypixels Pa are connected to the signal lines SL, SL−1, EL, and DL.Additionally, the main pixel Pm and the auxiliary pixel Pa are connectedto the initialization voltage line VL and the driving voltage line PL.However, embodiments are not limited thereto. According to anotherembodiment, at least one of the signal lines SL, SL−1, EL, and DL, theinitialization voltage line VL, and the driving voltage line PL may beshared by neighboring pixels.

The plurality of thin-film transistors may include a driving thin-filmtransistor T1, a switching thin-film transistor T2, a compensationthin-film transistor T3, a first initialization thin-film transistor T4,an operation control thin-film transistor T5, an emission controlthin-film transistor T6, and a second initialization thin-filmtransistor T7.

The signal lines may include the scan line SL transmitting a scan signalSn and the scan line SL−1 transmitting a scan signal Sn−1 to the firstinitialization thin-film transistor T4 and the second initializationthin-film transistor T7. The signal lines may also include the emissioncontrol line EL transmitting an emission control signal En to theoperation control thin-film transistor T5 and the emission controlthin-film transistor T6. The signal lines may also include the data lineDL crossing the scan line SL and transmitting a data signal Dm. Thedriving voltage line PL may transmit a first power voltage ELVDD (or adriving voltage) to the driving thin-film transistor T1. Theinitialization voltage line VL may transmit an initialization voltageVint for initializing the driving thin-film transistor T1 and a pixelelectrode.

A driving gate electrode G1 of the driving thin-film transistor T1 maybe connected to a first storage capacitor plate Cst1 of the storagecapacitor Cst. A driving source electrode S1 of the driving thin-filmtransistor T1 may be connected to a lower driving voltage line PLthrough the operation control thin-film transistor T5. A driving drainelectrode D1 of the driving thin-film transistor T1 may be electricallyconnected to a pixel electrode of a main organic light-emitting diodeOLED through the emission control thin-film transistor T6. The drivingthin-film transistor T1 may receive a data signal Dm according to aswitching operation of the switching thin-film transistor T2 and supplya driving current I_(OLED) to the main organic light-emitting diodeOLED.

A switching gate electrode G2 of the switching thin-film transistor T2may be connected to the scan line SL. A switching source electrode S2 ofthe switching thin-film transistor T2 may be connected to the data lineDL. A switching drain electrode D2 of the switching thin-film transistorT2 may be connected to the diving source electrode S1 of the drivingthin-film transistor T1, and to the lower driving voltage line PLthrough the operation control thin-film transistor T5. The switchingthin-film transistor T2 may be turned on in response to the scan signalSn transmitted through the scan line SL. Additionally, the switchingthin-film transistor T2 may perform a switching operation oftransmitting the data signal Dm transmitted through the data line DL tothe driving source electrode S1 of the driving thin-film transistor T1.

A compensation gate electrode G3 of the compensation thin-filmtransistor T3 may be connected to the scan line SL. The compensationsource electrode S3 of the compensation thin-film transistor T3 may beconnected to the driving drain electrode D1 of the driving thin-filmtransistor T1 and to the pixel electrode of the organic light-emittingdiode OLED through the emission control thin-film transistor T6. Acompensation drain electrode D3 of the compensation thin-film transistorT3 may be connected to the first storage capacitor plate Cst1 of thestorage capacitor Cst, a first initialization drain electrode D4 of thefirst initialization thin-film transistor T4, and the driving gateelectrode G1 of the driving thin-film transistor T1. The compensationthin-film transistor T3 may be turned on in response to the scan signalSn received through the scan line SL and may electrically connect thedriving gate electrode G1 and the driving drain electrode D1 of thedriving thin-film transistor T1 to diode-connect the driving thin-filmtransistor T1.

A first initialization gate electrode G4 of the first initializationthin-film transistor T4 may be connected to the scan line SL−1. A firstinitialization source electrode S4 of the first initialization thin-filmtransistor T4 may be connected to a second initialization drainelectrode D7 of the second initialization thin-film transistor T7 andthe initialization voltage line VL. A first initialization drainelectrode D4 of the first initialization thin-film transistor T4 may beconnected to the first storage capacitor plate Cst1 of the storagecapacitor Cst, the compensation drain electrode D3 of the compensationthin-film transistor T3, and the driving gate electrode G1 of thedriving thin-film transistor T1. The first initialization thin-filmtransistor T4 may be turned on in response to the scan signal Sn−1received through the scan line SL−1. The first initialization thin-filmtransistor T4 may perform an initialization operation of transmittingthe initialization voltage Vint to the driving gate electrode G1 of thedriving thin-film transistor T1 to initialize the voltage of the drivinggate electrode G1 of the driving thin-film transistor T1.

An operation control gate electrode G5 of the operation controlthin-film transistor T5 may be connected to the emission control lineEL, an operation control source electrode S5 of the operation controlthin-film transistor T5 may be connected to the lower driving voltageline PL, and an operation control drain electrode D5 of the operationcontrol thin-film transistor T5 may be connected to the driving sourceelectrode S1 of the driving thin-film transistor T1 and the switchingdrain electrode D2 of the switching thin-film transistor T2.

An emission control gate electrode G6 of the emission control thin-filmtransistor T6 may be connected to the emission control line EL, anemission control source electrode S6 of the emission control thin-filmtransistor T6 may be connected to the driving drain electrode D1 of thedriving thin-film transistor T1 and the compensation source electrode S3of the compensation thin-film transistor T3, and an emission controldrain electrode D6 of the emission control thin-film transistor T6 maybe electrically connected to a second initialization source electrode S7of the second initialization thin-film transistor T7 and the pixelelectrode of the organic light-emitting diode OLED.

The operation control thin-film transistor T5 and the emission controlthin-film transistor T6 may be simultaneously turned-on in response tothe emission control signal En received through the emission controlline EL so that the first power voltage ELVDD (or a driving voltage) istransmitted to the main organic light-emitting diode OLED, and thedriving current I_(OLED) flows in the organic light-emitting diode OLED.

A second initialization gate electrode G7 of the second initializationthin-film transistor T7 may be connected to the scan line SL−1, thesecond initialization source electrode S7 of the second initializationthin-film transistor T7 may be connected to the emission control drainelectrode D6 of the emission control thin-film transistor T6 and thepixel electrode of the main organic light-emitting diode OLED, and asecond initialization drain electrode D7 of the second initializationthin-film transistor T7 may be connected to the first initializationsource electrode S4 of the first initialization thin-film transistor T4and the initialization voltage line VL. The second initializationthin-film transistor T7 may be turned on in response to the scan lineSn−1 received through the scan line SL−1 and may initialize the pixelelectrode of the main organic light-emitting diode OLED.

FIG. 4B illustrates that the first initialization thin-film transistorT4 and the second initialization thin-film transistor T7 are connectedto the scan line SL−1. However, embodiments are not limited thereto.According to another embodiment, the first initialization thin-filmtransistor T4 may be connected to the scan line SL−1 to be driven inresponse to the scan signal Sn−1 and the second initialization thin-filmtransistor T7 may be connected to an additional signal line (forexample, a next scan line) to be driven in response to a signaltransmitted to the additional signal line.

A second storage capacitor plate Cst2 of the storage capacitor Cst maybe connected to the driving voltage line PL, and the opposite electrodeof the organic light-emitting diode OLED may be connected to the secondpower voltage ELVSS (or a common voltage). Accordingly, the organiclight-emitting diode OLED may receive the driving current I_(OLED) fromthe driving thin-film transistor T1 to emit light to display an image.

FIG. 4B illustrates that the compensation thin-film transistor T3 andthe first initialization thin-film transistor T4 have dual gateelectrodes. However, the compensation thin-film transistor T3 and thefirst initialization thin-film transistor T4 may have one gateelectrode.

According to the present embodiment, the main pixel Pm and the auxiliarypixel Pa may include the same pixel circuit PC. However, embodiments arenot limited thereto. The main pixel Pm and the auxiliary pixel Pa mayinclude the pixel circuits PC having different structures. Variousmodifications are possible. For example, the main pixel Pm may implementthe pixel circuit PC of FIG. 4B and the auxiliary pixel Pa may implementthe pixel circuit PC of FIG. 4A.

FIGS. 5 and 6 are schematic plan views corresponding to region B of FIG.3 and illustrate part of the adjacent edge portions of the display areaDA and the sensor area SA. FIG. 7 is a schematic cross-sectional view ofthe display panel 10 taken along line I-I′ of FIG. 5 and FIG. 8 is aschematic cross-sectional view of the display panel 10 taken along linesII-II′ and III-III′ of FIG. 5 .

First, referring to FIGS. 5 and 6 , a display apparatus according to anembodiment may include the display area DA and the sensor area SAincluding the transmission area TA and may include a plurality ofopposite electrodes 223. The opposite electrodes 223 may include aplurality of first opposite electrodes 223A arranged to correspond tothe display area DA and a plurality of second opposite electrodes 223Barranged to correspond to the sensor area SA, wherein a shape of each ofthe plurality of first opposite electrodes 223A may be different from ashape of each of the plurality of second opposite electrodes 223B. Theopposite electrodes 223 may be connected to one another, and may have agreater thickness at a connection portion.

As used herein, the phrases “correspond to the display area DA” and“correspond to the sensor area SA” may refer to an element of which morethan half of the area (in the x-y plane) overlaps with the display areaDA or sensor area SA, respectively.

The display apparatus, according to the present embodiment, may furtherinclude a plurality of third opposite electrodes 223C arranged to beadjacent to the edge portion of the display area DA and the sensor areaSA. For example, the third opposite electrodes 223C may be arrangedbetween the first opposite electrodes 223A and the second oppositeelectrodes 223B.

Each of the first opposite electrodes 223A, the second oppositeelectrodes 223B, and the third opposite electrodes 223C may be arrangedto correspond to one pixel group Pg.

A pixel group Pg may include at least one pixel Pg (or Pm). FIG. 5illustrates that one pixel group Pg includes four pixels Pa (or Pm)arranged in two columns. However, embodiments are not limited thereto.The number of pixels Pa (or Pm) included in one pixel group Pg and thearrangement of the pixels Pa (or Pm) may be variously modified. Forexample, three pixels Pa (or Pm) arranged in parallel in a column may beincluded in one pixel group Pg, or eight pixels Pa (or Pm) arranged infour columns may be included in one pixel group Pg. In thisspecification, the pixels Pa (or Pm) may denote sub-pixels emitting red,green, or blue light.

The transmission area TA may be an area in which a display element isnot arranged and thus has a high light transmittance and may.Additionally, the transmission area TA provided in a multiple number inthe sensor area SA. The transmission area TA may be alternately arrangedwith the pixel group Pg in a first direction (x) and/or a seconddirection (y). Alternatively, the transmission areas TA may be arrangedto surround the pixel group Pg. Alternatively, the auxiliary pixels Pamay be arranged to surround the transmission area TA. According to thepresent embodiment, the transmission area TA may be an area in whichneither the first opposite electrodes 223A, the second oppositeelectrodes 223B, nor the third opposite electrodes 223C are netarranged. Instead, the transmission are TA may be an area correspondingto an opening 2330P of the opposite electrode 233 in the sensor area SA.

A size of the transmission area TA may be greater than a size of anemission area of at least one pixel Pa (or Pm). In some embodiments, thesize of the transmission area TA may be equal to or greater than a sizeof one pixel group Pg. According to the present embodiment, thetransmission area TA may be provided in a multiple number. In this case,the transmission areas TA may include transmission areas TA havingdifferent sizes. For example, as illustrated in FIG. 5 , a width Wt ofthe transmission area TA arranged between the second opposite electrodes223B, the width Wt being in the first direction (the x-direction), maybe greater than a width Wt′ of the transmission area TA arranged betweenthe third opposite electrodes 223C, the width Wt′ being in the firstdirection (the x-direction).

The first opposite electrode 223A, second opposite electrode 223B, andthird opposite electrodes 223C may be electrically connected to oneanother. First opposite electrodes 223A adjacent to each other in thefirst direction (the x-direction) from among the first oppositeelectrodes 223A may overlap and contact each other at edges thereof. Thefirst opposite electrodes 223A may contact each other in the firstdirection (the x-direction) and may be electrically connected to thesecond power supply line 170 (see FIG. 3 ) of the non-display area NDA.First opposite electrodes 223A adjacent to each other in a seconddirection (a y-direction) from among the first opposite electrodes 223Amay be apart from each other. However, the first opposite electrodes223A separated from each other are electrically connected to the secondpower supply line 170 of the non-display area NDA. Thus, the firstopposite electrodes 223A may be electrically connected to each other.

The second opposite electrodes 223B may be arranged to surround thetransmission area TA. The second opposite electrodes 223B are arrangedto be adjacent to each other along an edge of the transmission area TA,from the second opposite electrodes 223B surrounding the transmissionarea TA and may each have projections PT. Projections PT may project atvertexes of each second opposite electrode 223B, wherein the projectionsPT of each second opposite electrode 223B may overlap and contact eachother. The second opposite electrodes 223B connected to each other maybe electrically connected to the second power supply line 170 of thenon-display area NDA.

According to the present embodiment, it may be understood that thesecond opposite electrodes 223B arranged in the first direction (thex-direction) may be arranged to be apart from each other with thetransmission area TA therebetween. Additionally, the second oppositeelectrodes 223B arranged in the second direction (the y-direction) maybe arranged to be apart from each other with the transmission area TAtherebetween. Here, it may be understood that second opposite electrodes223B arranged in an i^(th) column may overlap and contact secondopposite electrodes 223B arranged in an i+1^(th) column at theprojections PT thereof.

The third opposite electrodes 223C may be arranged to be adjacent to theedge portion of the display area DA and the sensor area SA, wherein oneor more of the third opposite electrodes 223C may contact the firstopposite electrodes 223A of the display area DA. Additionally, one ormore of the third opposite electrodes 223C may contact the secondopposite electrodes 223B of the sensor area SA.

The third opposite electrodes 223C arranged in the display area DA maybe alternately arranged with the first opposite electrodes 223A in thefirst direction. Here, edges of the third opposite electrodes 223C andedges of the first opposite electrodes 223A may partially overlap andcontact each other.

The third opposite electrodes 223C arranged in the sensor area SA maysurround the transmission areas TA with the second opposite electrodes223B. Vertexes of the third opposite electrodes 223C may overlap andcontact the projections PT of the second opposite electrodes 223B.

The first opposite electrode 223A, second opposite electrode 223B, andthird opposite electrodes 223C may be electrically connected to oneanother so a uniform second power voltage may be supplied to the entiredisplay area DA.

Based on the shape of the second opposite electrodes 223B, the area ofthe transmission areas TA may be increased, which increases the lighttransmittance in the transmission areas TA. For example, the secondopposite electrodes 223B may be in the shape of a rectangle with anotched removed from two or more sides. In some cases, a rectangularnotch is removed from each of the four sides. The removed notches mayenable the size of the transmission areas TA to be increased whileenabling the second opposite electrodes 223B to overlap with othersecond opposite electrodes 223B and, in some cases, third oppositeelectrodes 223C.

Referring to FIG. 6 , shapes of the first opposite electrode 223A,second opposite electrode 223B, and third opposite electrodes 223C aredescribed in detail. Referring to FIG. 6 , each of the first oppositeelectrodes 223A may have a shape of a first quadrangle with a firstwidth W1 in the first direction (the x-direction). Each of the secondopposite electrodes 223B may have a shape of a second quadrangle with asecond width W2 in the first direction (the x-direction), whereinprojections PT project at four vertexes of the second quadrangle. Here,the projections PT may be an area at which adjacent second oppositeelectrodes 223B overlap each other, and may be smaller than the secondquadrangle.

In some embodiments, the first width W1 may be greater than the secondwidth W2. For example, the second width W2 of the second oppositeelectrode 223B arranged in the sensor area SA is less than the firstwidth W1 of the first opposite electrode 223A arranged in the displayarea DA. The second width W2 is in the first direction (the x-direction)and the first width W1 is in the first direction (the x-direction).Thus, distances between the second opposite electrodes 223B arrangedwith the transmission area TA therebetween may be increased. Forexample, a width Wt of the transmission area TA in the first direction(the x-direction) may be greater than the first width W1. Thus, an areaof the transmission area TA, through which light may be transmitted, maybe increased. (Wt>W1>W2)

In some embodiments, an area of one third opposite electrode 223C may begreater than an area of one first opposite electrode 223A. To this end,in FIGS. 5 and 6 , a third length L3 of the third opposite electrode223C in the second direction may be greater than a first length L1 ofthe first opposite electrode 223A in the second direction. Because thethird length L3 is greater than the first length L1, the third oppositeelectrode 223C arranged in the sensor area SA may overlap and contactthe first opposite electrode 223A and the second opposite electrode 223Bat a vertex area thereof. In FIG. 6 , a third width W3 in the firstdirection (the x-direction) is substantially the same as the first widthW1. However, embodiments are not limited thereto. For example, the thirdwidth W3 may be greater than the first width W1.

A distance d1 between the first opposite electrodes 223A adjacent toeach other in the second direction (the y-direction) from among thefirst opposite electrodes 223A may be much less than a length d2 of thetransmission area TA in the second direction (the y-direction). Forexample, the length d2 of the transmission area TA may be about five toten times the distance d1 (d1<<d2). In some embodiments, the distance d1may be about 10 through about 20 um.

Thus, according to one or more embodiments, a display apparatus 1comprises a substrate 100 including a display area DA and a sensor areaSA with respect to a plan view, the sensor area SA including at leastone transmission area TA; a plurality of first opposite electrodes 223Ahaving a first shape and overlapping the display area DA in the planview; and a plurality of second opposite electrodes 223B having a secondshape different from the first shape and overlapping the sensor area SAin the plan view, wherein the at least one transmission area TA bordersthe plurality of second opposite electrodes 223B on at least twoopposite sides in the plan view.

In some examples, the second shape comprises a rectangle with a notch oneach side, where the notch on at least one side of at least two of theplurality of second opposite electrodes 223B borders the at least onetransmission area TA in the plan view, and where a portion of thetransmission area TA corresponds to the notch on at least one side ofthe at least two of the plurality of second opposite electrodes 223B.

In some examples, the display apparatus 1 further comprises a pluralityof third opposite electrodes 223C having a third shape (which may be arectangle with different dimensions than a rectangle of the firstshape), wherein each of the plurality of third opposite electrodes 223Cborders a boundary between the display area DA and the sensor area SA inthe plan view and overlaps at least one of the plurality of firstopposite electrodes 223A or at least one of the plurality of secondopposite electrodes 223B.

Hereinafter, referring to FIGS. 7 and 8 , a stack structure of a displayapparatus according to an embodiment will be described. FIG. 7 is aschematic cross-sectional view of the display apparatus taken along lineI-I′ of FIG. 5 and illustrates a partial cross-section of a display areaDA and FIG. 8 is a schematic cross-sectional view of the displayapparatus taken along lines II-II′ and III-III′ of FIG. 5 andillustrates a partial cross-section of a sensor area SA.

Referring to FIGS. 7 and 8 , the display apparatus, according to anembodiment, may include the display area DA and the sensor area SA. Amain pixel Pm may be arranged in the display area DA and an auxiliarypixel Pa and a transmission area TA may be arranged in the sensor areaSA.

The main pixel Pm may include a main thin-film transistor TFT, a mainstorage capacitor Cst, and a main organic light-emitting diode OLED. Theauxiliary pixel Pa may include an auxiliary thin-film transistor TFT′,an auxiliary storage capacitor Cst′, and an auxiliary organiclight-emitting diode OLED′. The transmission area TA may have atransmission hole TAH to correspond to the transmission area TA.

Hereinafter, a structure in which the components of the displayapparatus, according to an embodiment, are stacked will be described.

The substrate 100 may include glass or polymer resins. The polymerresins may include PES, PAR, PEI, PEN, PET, PPS, polyarylate, PI, PC,CAP, or the like. The substrate 100, including the polymer resins, mayhave the flexible, rollable, or bendable characteristics. The substrate100 may have a multi-layered structure including a layer including thepolymer resins described above and an inorganic layer (not shown).

A buffer layer 111 may be located on the substrate 100, may reduce orprevent penetration of foreign materials, moisture, or foreignsubstances from below the substrate 100, and may provide a planarizationsurface on the substrate 100. The buffer layer 111 may include aninorganic material, such as oxide or nitride, an organic material, or anorganic and inorganic compound, and may have a single-layered structureor a multi-layered structure including an inorganic material and/or anorganic material. A barrier layer (not shown) preventing the penetrationof foreign substances may further be included between the substrate 100and the buffer layer 111. In some embodiments, the buffer layer 111 mayinclude silicon oxide (SiO₂) or silicon nitride (SiN_(x)). The bufferlayer 111 may include a first buffer layer 111 a and a second bufferlayer 111 b that are stacked.

In the sensor area SA, a lower electrode layer BSM may be arrangedbetween the first buffer layer 111 a and the second buffer layer 111 b.According to another embodiment, the lower electrode layer BSM may bearranged between the substrate 100 and the first buffer layer 111 a. Thelower electrode layer BSM may be arranged below the auxiliary thin-filmtransistor TFT′ and may prevent the deterioration of the characteristicsof the auxiliary thin-film transistor TFT′ caused by the light emittedfrom the component 20, etc.

Also, the lower electrode layer BSM may be connected to a line GCLarranged in another layer via a contact hole. The lower electrode layerBSM may receive a constant voltage or a signal from the line GCL. Forexample, the lower electrode layer BSM may receive a first power voltageELVDD (or a driving voltage) or a scan signal. The lower electrode layerBSM may significantly reduce the probability of the occurrence ofelectrostatic discharge by receiving the constant voltage or the signal.The lower electrode layer BSM may include Al, Pt, Pd, Ag, Mg, Au, Ni,Nd, Ir, Cr, Li, Ca, Mo, Ti, W, and/or Cu. The lower electrode layer BSMmay include a single layer or multiple layers, including the materialsdescribed above.

The main thin-film transistor TFT and the auxiliary thin-film transistorTFT′ may be arranged on the buffer layer 111. The main thin-filmtransistor TFT may include a first semiconductor layer A1, a first gateelectrode G1, a first source electrode S1, and a first drain electrodeD1. The auxiliary thin-film transistor TFT may include a secondsemiconductor layer A2, a second gate electrode G2, a second sourceelectrode S2, and a second drain electrode D2. The main thin-filmtransistor TFT may be connected to the main organic light-emitting diodeOLED of the display area DA and may drive the main organiclight-emitting diode OLED. The auxiliary thin-film transistor TFT′ maybe connected to the auxiliary organic light-emitting diode OLED′ of thesensor area SA and may drive the auxiliary organic light-emitting diodeOLED′.

The first semiconductor layer A1 and the second semiconductor layer A2may be arranged on the buffer layer 111 and may include polysilicon.According to another embodiment, the first semiconductor layer A1 andthe second semiconductor layer A2 may include amorphous silicon.According to another embodiment, the first semiconductor layer A1 andthe second semiconductor layer A2 may include oxide of at least oneselected from among the group consisting of In, Ga, Sn, Zr, V, Hf, Cd,Ge, Cr, Ti, and Zn. The first semiconductor layer A1 and the secondsemiconductor layer A2 may include a channel area and a source area anda drain area doped with impurities.

The second semiconductor layer A2 may overlap the lower electrode layerBSM with the second buffer layer 111 b therebetween. According to anembodiment, a width of the second semiconductor layer A2 may be lessthan a width of the lower electrode layer BSM. Thus, when viewed from adirection perpendicular to the substrate 100, the second semiconductorlayer A2 may generally overlap the lower electrode layer BSM.

A first gate insulating layer 112 may be included to cover the firstsemiconductor layer A1 and the second semiconductor layer A2. The firstgate insulating layer 112 may include an inorganic insulating material,such as SiO₂, SiN_(x), silicon oxynitride (SiON), aluminum oxide(Al₂O₃), titanium oxide (TiO₂), tantalum oxide (Ta₂O₅), hafnium oxide(HfO₂), or zinc oxide (ZnO₂). The first gate insulating layer 112 mayinclude a single layer or multiple layers, including the organicinsulating materials described above.

A first gate electrode G1 and a second gate electrode G2 may be arrangedon the first gate insulating layer 112 to overlap the firstsemiconductor layer A1 and the second semiconductor layer A2,respectively. The first gate electrode G1 and the second gate electrodeG2 may include Mo, Al, Cu, Ti, etc., and may include a single layer ormultiple layers. For example, the first gate electrode G1 and the secondgate electrode G2 may include a single layer, including Mo.

A second gate insulating layer 113 may be included to cover the firstgate electrode G1 and the second gate electrode G2. The second gateinsulating layer 113 may include an inorganic insulating material, suchas SiO₂, SiN_(x), SiON, Al₂O₃, TiO₂, Ta₂O₅, HfO₂, or ZnO₂. The secondgate insulating layer 113 may include a single layer or multiple layers,including the organic insulating materials described above.

A first upper electrode CE2 of the main storage capacitor Cst and asecond upper electrode CE2′ of the auxiliary storage capacitor Cst′ maybe arranged on the second gate insulating layer 113.

The first upper electrode CE2 may overlap the first gate electrode G1therebelow in the display area DA. The first gate electrode G1, and thefirst upper electrode CE2 overlapping each other with the second gateinsulating layer 113 therebetween may be included in the main storagecapacitor Cst. For example, the first gate electrode G1 may function asa first lower electrode CE1 of the main storage capacitor Cst.

The second upper electrode CE2′ may overlap the second gate electrode G2therebelow in the sensor area SA. The second gate electrode G2 and thesecond upper electrode CE2′ overlapping each other with the second gateinsulating layer 113 therebetween may be included in the auxiliarystorage capacitor Cst′. The first gate electrode G1 may function as asecond lower electrode CE1′ of the auxiliary storage capacitor Cst′.

The first upper electrode CE2 and the second upper electrode CE2′ mayinclude Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, W,and/or Cu and may include a single layer or multiple layers includingthe materials described above.

An interlayer insulating layer 115 may be formed to cover the firstupper electrode CE2 and the second upper electrode CE2′. The interlayerinsulating layer 115 may include SiO₂, SiN_(x), SiON, Al₂O₃, TiO₂,Ta₂O₅, HfO₂, or ZnO₂.

Source electrodes S1 and S2 and drain electrodes D1 and D2 may bearranged on the interlayer insulating layer 115. The source electrodesS1 and S2 and the drain electrodes D1 and D2 may include a conductivematerial including Mo, Al, Cu, Ti, etc., and may include multiple layersor a single layer including the materials described above. For example,the source electrodes S1 and S2, and the drain electrodes D1 and D2 mayinclude a multi-layered structure, including Ti/Al/Ti.

A planarization layer 117 may be arranged to cover the source electrodesS1 and S2 and the drain electrodes D1 and D2. The planarization layer117 may have a planarized upper surface so that a first pixel electrode221 and a second pixel electrode 221′ may be formed thereon to be flat.

The planarization layer 117 may include a single layer or multiplelayers, including an organic material or an inorganic material. Theplanarization layer 117 may include benzocyclobutene (BCB), PI,hexamethyldisiloxane (HMDSO), polymethylmethacrylate (PMMA), or ageneral-purpose polymer, such as polystylene (PS), a polymer derivatehaving a phenol-based group, an acryl-based polymer, an imide-basedpolymer, an arylether-based polymer, an amide-based polymer, afluorine-based polymer, a p-xylene-based polymer, a vinyl alcohol-basedpolymer, and a blend thereof. The planarization layer 117 may includeSiO₂, SiN_(x), SiON, Al₂O₃, TiO₂, Ta₂O₅, HfO₂, or ZnO₂. After theplanarization layer 117 is formed, a chemical mechanical polishingoperation may be performed to provide a flat upper surface.

An opening may be included in the planarization layer 117 to expose anyof the first source electrode S1 and the first drain electrode D1 of themain thin-film transistor TFT. The first pixel electrode 221 may contactthe first source electrode S1 or the first drain electrode D1 throughthe opening to be electrically connected to the main thin-filmtransistor TFT.

Also, the planarization layer 117 may include an opening to expose anyof the second source electrode S2 and the second drain electrode D2 ofthe auxiliary thin-film transistor TFT′. The second pixel electrode 221′may contact the second source electrode S2 or the second drain electrodeD2 through the opening to be electrically connected to the auxiliarythin-film transistor TFT′.

The first pixel electrode 221 and the second pixel electrode 221′ mayinclude a conductive oxide, such as indium tin oxide (ITO), indium zincoxide (IZO), zinc oxide (ZnO), indium oxide (In₂O₃), indium galliumoxide (IGO), or aluminum zinc oxide (AZO). According to anotherembodiment, the first pixel electrode 221 and the second pixel electrode221′ may include a reflective layer including Ag, Mg, Al, Pt, Pd, Au,Ni, Nd, Ir, Cr, or a compound thereof. According to another embodiment,the first pixel electrode 221 and the second pixel electrode 221′ mayfurther include a layer including ITO, IZO, ZnO, or In₂O₃ above/belowthe reflective layer described above. In some embodiments, the firstpixel electrode 221, and the second pixel electrode 221′ may include astack structure including ITO/Ag/ITO.

A pixel-defining layer 119 may cover an edge of each of the first pixelelectrode 221 and the second pixel electrode 221′. The pixel-defininglayer 119 may overlap each of the first pixel electrode 221 and thesecond pixel electrode 221′ and may include a first opening OP1 and asecond opening OP2 defining an emission area of a pixel. Thepixel-defining layer 119 may increase a distance between edges of thefirst and second pixel electrodes 221 and 221′ and the oppositeelectrode 223 thereon to prevent the occurrence of arcs, etc., at edgesof the first and second pixel electrodes 221 and 221′. Thepixel-defining layer 119 may be formed by using a spin coating method,etc., by using an organic insulating material, such as PI, polyamide,acryl resins, BCB, HMDSO, phenol resins, etc.

A first functional layer 222 a may be arranged on the first and secondpixel electrodes 221 and 221′ exposed through the openings OP1 and OP2of the pixel-defining layer 119. The first functional layer 222 a may bearranged to extend onto an upper surface of the pixel-defining layer119. The first functional layer 222 a may include a single layer ormultiple layers. The first functional layer 222 a may include a holetransport layer (HTL) having a single-layered structure. Alternatively,the first functional layer 222 a may include a hole injection layer(HIL) and an HTL. The first functional layer 222 a may be formed as asingle body to correspond to the main pixels Pm and the auxiliary pixelsPa included in the display area DA and the sensor area SA.

A first emission layer 222 b and a second emission layer 222 b′ formedto correspond to the first pixel electrode 221 and the second pixelelectrode 221′, respectively, may be arranged on the first functionallayer 222 a. A first emission layer 222 b and a second emission layer222 b′ may include a high molecular-weight material or a lowmolecular-weight material and may emit red, green, blue, or white light.

A second functional layer 222 c may be formed on the first emissionlayer 222 b and the second emission layer 222 b′. The second functionallayer 222 c may include a single layer or multiple layers. The secondfunctional layer 222 c may include an electron transport layer (ETL)and/or an electron injection layer (EIL). The second functional layer222 c may be formed as a single body to correspond to the main pixels Pmand the auxiliary pixels Pa included in the display area DA and thesensor area SA. The first functional layer 222 a and/or the secondfunctional layer 222 c may be omitted.

The opposite electrode 223 may be arranged on the second functionallayer 222 c. The opposite electrode 223 may include a conductivematerial having a low work function. For example, the opposite electrode223 may include a (semi) transparent layer including Ag, Mg, Al, Pt, Pd,Au, Ni, Nd, Ir, Cr, Li, Ca, or an alloy thereof. Alternatively, theopposite electrode 223 may further include a layer, such as ITO, IZO,ZnO, or In₂O₃, on the (semi) transparent layer, including the materialsdescribed above.

According to the present embodiment, the opposite electrode 223 mayinclude the first opposite electrodes 223A arranged in the display areaDA and the second opposite electrodes 223B arranged in the sensor areaSA, as described above. Also, the opposite electrode 223 may furtherinclude the third opposite electrodes 223 (see FIG. 5 ).

First opposite electrodes 223A adjacent to each other from among thefirst opposite electrodes 223A may overlap and contact each other atedges thereof (Region R1 of FIG. 7 ). The overlapping portion may beformed between the main pixels Pm. Second opposite electrodes 223Badjacent to each other from among the second opposite electrodes 223Bmay overlap and contact each other at the projections PT thereof (RegionR2 of FIG. 8 ). A thickness of the opposite electrode 223 at theoverlapping portion may be greater than a thickness of each of the firstopposite electrodes 223A at a central portion thereof.

One or more second opposite electrodes 223B may be arranged to be apartfrom each other with the transmission portion TA therebetween in thesensor area SA. Here, a distance by which the second opposite electrodes223B are apart from each other may be the opening 223OP of the oppositeelectrode 223. The opening 223OP may include the transmission hole TAHthrough which light is transmitted. A width Wt of the transmission holeTAH may be greater than a width Wa of an emission area defined as asecond opening OP2 of the pixel-defining layer 119.

That the transmission hole TAH is formed may denote that a member, suchas the opposite electrode 223, etc., is removed in correspondence withthe transmission area TA. Thus, the light transmittance may besignificantly increased in the light transmission area TA.

Although not shown in FIGS. 7 and 8 , a capping layer may be formed onthe opposite electrode 223 to protect the opposite electrode 223 andimprove the light extraction efficiency. The capping layer may includeLiF. Alternatively, the capping layer may include an inorganicinsulating material, such as SiN_(x), and/or an organic insulatingmaterial. In some embodiments, the capping layer may be omitted.

FIGS. 9 and 10 are schematic cross-sectional views of a displayapparatus according to another embodiment. FIGS. 9 and 10 may correspondto line II-II′ of FIG. 5 . In FIGS. 9 and 10 , reference numerals thatare the same as the reference numerals in FIG. 8 denote the members thatare the same as the members in FIG. 8 . Thus, their descriptions willnot be repeated.

FIG. 8 illustrates that the transmission hole TAH includes the opening223OP of the opposite electrode 223. However, embodiments are notlimited thereto.

Referring to FIG. 9 , the transmission hole TAH may further include afirst hole H1 defined in the pixel-defining layer 119 and/or a secondhole H2 defined in the planarization layer 117.

The pixel-defining layer 119 may have the first hole H1 to correspond tothe transmission area TA. The first hole H1 may be arranged to overlapthe opening 223OP of the opposite electrode 223. In the drawing, it isillustrated that a lower width of the opening 223OP is greater than alower width of the first hole H1. However, embodiments are not limitedthereto. For example, the opposite electrode 223 may extend to an innersidewall of the transmission hole TAH so that the width of the opening223OP may be less than the width of the first hole H1.

The planarization layer 117 may have the second hole H2 to correspond tothe transmission area TA. The second hole H2 may be arranged to overlapthe opening 223OP of the opposite electrode 223. In the drawing, it isillustrated that a lower width of the first hole H1 is greater than alower width of the second hole H2. However, embodiments are not limitedthereto. For example, the pixel-defining layer 119 may cover an edge ofthe second hole H2 of the planarization layer 117 so that the width ofthe first hole H1 may be less than the width of the second hole H2.

Because the first hole H1 and/or the second hole H2 are/is formed, thelight transmittance of the transmission area TA may further be improved.In the drawing, it is illustrated that both the first hole H1 and thesecond hole H2 are formed. However, embodiments are not limited thereto.For example, various modifications are possible. For example, one of thefirst hole H1 and the second hole H2 may be included to correspond tothe transmission area TA. The first functional layer 222 a and thesecond functional layer 222 c may be arranged inside the transmissionhole TAH.

Referring to FIG. 10 , the transmission hole TAH may further include athird hole H3 corresponding to the transmission area TA.

When the first gate insulating layer 112, the second gate insulatinglayer 113, and the interlayer insulating layer 115 are commonly referredto as an inorganic insulating layer IL, the inorganic insulating layerIL may have a third hole H3 corresponding to the transmission area TA.The third hole H3 may be formed to expose an upper surface of the bufferlayer 111 or the substrate 100. A first opening of the first gateinsulating layer 112, a second opening of the second gate insulatinglayer 113, and a third opening of the interlayer insulating layer 115may overlap one another, thereby forming the third hole H3. The firstthrough third openings being formed to correspond to the transmissionarea TA. The first through third openings may be separately formed inseparate processes or simultaneously formed in the same process.Alternatively, the first opening and the second opening may besimultaneously formed, and the third opening may be separately formed.As such, various modifications are possible. When the first throughthird openings are formed in separate processes, a step difference maybe formed at a side surface of the third hole H3.

The inorganic insulating layer IL may include a groove, rather than thethird hole H3 exposing the buffer layer 111. For example, the first gateinsulating layer 112 of the inorganic insulating layer IL may becontinually arranged to correspond to the transmission area TA and thesecond gate insulating layer 113. Additionally, the interlayerinsulating layer 115 may respectively have the second opening and thethird opening to correspond to the transmission portion TA.

Alternatively, the first gate insulating layer 112 and the second gateinsulating layer 113 may be continually arranged to correspond to thetransmission area TA. Additionally, the interlayer insulating layer 115may include the third opening to correspond to the transmission area TA.As such, various modifications are possible.

According to the present embodiments, layers including the inorganicinsulating layer IL, the planarization layer 117, and the pixel-defininglayer 119 may have sufficient transmittance of light to allow thecomponent 20 to transmit and receive light. Thus, the inorganicinsulating layer IL, the planarization layer 117, the pixel-defininglayer 119 may not include holes corresponding to the transmissionportion TA. However, when the inorganic insulating layer IL, theplanarization layer 117, and the pixel-defining layer 119 include theholes corresponding to the transmission area TA, the light transmittancemay further be improved.

FIG. 11 illustrates an example of a mask M1 for forming an oppositeelectrode according to embodiments and FIGS. 12A and 12B illustrate amanufacturing method using the mask M1.

Referring to FIG. 11 , the mask M1, according to an embodiment, mayinclude a first mask opening 510A and a second mask opening 510B havingdifferent shapes from each other. Also, the mask M1, according to anembodiment, may further include a third mask opening 510C having adifferent size from the first mask opening 510A.

The first mask opening 510A may have a shape of a quadrangle with afirst mask width MW1 in a first direction (an x-direction) and a firstmask length ML1 in a second direction (a y-direction).

The second mask opening 510B may include an opening having a shape of aquadrangle with a second mask width MW2 in the first direction (thex-direction) and a second mask length ML2 in the second direction (they-direction), and may further include an extension hole EH extendingfrom a vertex of the opening. The second mask width MW2 may denote awidth in the first direction (the x-direction) crossing a center of thesecond mask opening 510B.

The third mask opening 510C may have a shape of a quadrangle with athird mask width MW3 in the first direction (the x-direction) and athird mask length ML3 in the second direction (the y-direction).

Here, the first mask width MW1 may be greater than the second mask widthMW2. The first mask width MW1 may be substantially the same as the thirdmask width MW3. The third mask length ML3 may be greater than the firstmask length ML1. An area of the third mask opening 510C may be greaterthan an area of the first mask opening 510A.

The first mask opening 510A, the third mask opening 510C, and the secondmask opening 510B may be sequentially arranged in the second direction(the y-direction).

The first mask opening 510A may be arranged to be apart from the thirdmask opening 510C by a first distance d1′. The third mask opening 510Cmay be arranged to be apart from the second mask opening 510B by asecond distance d2′. Here, the second distance d2′ may be greater thanthe first distance d1′. In some embodiments, the second distance d2′ maybe about five to ten times the first distance d1′ (d2′>d1′).

Second mask openings 510B may further be arranged in a positive(+)y-direction to be apart from each other by the second distance d2′ andfirst mask openings 510A may further be arranged in a negative(−)y-direction to be apart from each other by the first distance d1′.

The first mask opening 510A may be provided in a multiple number and maybe serially arranged in the first direction to be apart from each otherby a third distance d3′. The second mask opening 510B may be provided ina multiple number and may be serially arranged in the first direction tobe apart from each other by a fourth distance d4′. Here, the fourthdistance d4′ may denote a shortest distance between the second maskopenings 510B. The third mask opening 510C may be provided in a multiplenumber and may be serially arranged in the first direction to be apartfrom each other by the third distance d3′.

Here, the third distance d3′ and the fourth distance d4′ may be lessthan the first mask width MW1.

The mask M1, according to the present embodiment, may include a maskused for depositing the opposite electrode 233 (see FIG. 5 ) and mayinclude a fine metal mask (FMM). The FMM may be manufactured by forminga hole in a metal plate and stretching the metal plate. Accordingly,each of the first mask opening 510A, the second mask opening 510B, andthird mask opening 510C may be symmetrically formed based on an axis inthe first direction and an axis in the second direction. The axis in thefirst direction crosses a center of each of the first mask opening 510A,the second mask opening 510B, and third mask opening 510C. The axis ofthe second direction crosses the center of each of the first maskopening 510A, the second mask opening 510B, and third mask opening 510C.

The first mask opening 510A may be included to form the first oppositeelectrode 223A, and a size of the first mask opening 510A may be lessthan or equal to a size of the first opposite electrode 223A. The secondmask opening 510B may be included to form the second opposite electrode223B, and a size of the second mask opening 510B may be less than orequal to a size of the second opposite electrode 223B. The third maskopening 510C may be included for forming the third opposite electrode223C, and a size of the third mask opening 510C may be less than orequal to a size of the third opposite electrode 223C.

According to the present embodiment, a deposition process using one maskM1 may be used to form the opposite electrode 223. FIGS. 12A and 12Billustrate a method of depositing the opposite electrode 223 by usingthe mask M1.

Referring to FIG. 12A, after forming the second functional layer 223 c(see FIG. 7 ) on the substrate 100, the first mask opening 510A, thesecond mask opening 510B, and third mask opening 510C may be arranged tocorrespond to one or more pixel groups Pg.

Thereafter, a deposition material for forming the opposite electrode maybe released by using a deposition source (not shown) to primarilydeposit a portion of the opposite electrode 223 on the second functionallayer 222 c. Here, the first opposite electrode 223A, second oppositeelectrodes 223B, and third opposite electrode 223C may be partiallyformed according to the arrangement of the first mask opening 510A, thesecond mask opening 510B, and third mask opening 510C of the mask M1.

Next, as illustrated in FIG. 12B, after arranging the mask M1 by movingthe position of the mask M1 in the x-direction and the y-direction, aremaining portion of the opposite electrode 223 may be secondarilydeposited. The portion of the first opposite electrode 223A, secondopposite electrodes 223B, and third opposite electrode 223C, the portionbeing formed by the secondary deposition may overlap and contact theportion of the first opposite electrode 223A, second opposite electrodes223B, and third opposite electrode 223C, the portion being formed by theprimary deposition. Accordingly, the deposition process may include:aligning the mask M1 to correspond to a substrate 100, wherein an edgeof the substrate 100 extends in a first direction (e.g., thex-direction); performing a first operation of depositing a portion of anopposite electrode 223 on the substrate 100 using the mask M1; andperforming a second operation of depositing another portion of theopposite electrode 223 by moving the mask M1 in a third direction at anangle between the first direction and a second direction (e.g., they-direction) perpendicular to the first direction.

In FIG. 12B, after the opposite electrode 223 is primarily deposited,the opposite electrode 223 may be secondarily deposited by arranging themask M1 in the right and upper direction by 45 degrees. However,embodiments are not limited thereto. After the opposite electrode 223 isprimarily deposited, the opposite electrode 223 may be secondarilydeposited by arranging the mask M1 in the left and lower direction by−45 degrees.

When the mask M1 according to the embodiment is used, the oppositeelectrode 223 may be deposited twice by using one mask M1. Thus, processtime and costs may be reduced compared to process time and costs of amethod using two masks.

As illustrated in FIG. 14 , according to the embodiments, when thedisplay apparatuses are formed by using the deposition method, exteriorpatterns 223D may be included at an outermost portion of the oppositeelectrode 223 formed in the non-display area NDA. In this specification,the exterior patterns 223D denote patterns formed at the outermostportion of the opposite electrode 223. The exterior patterns 223D may beincluded in the opposite electrode 223, and FIG. 13 illustrates some ofthe exterior patterns 223D.

Referring to FIG. 13 , the exterior patterns 223D may be arranged tooverlap the second power supply line 170 and may be arranged to be apartfrom each other by a distance d1′ or d2′.

The distances d1′ and 2′ between the exterior patterns 233D may bevariously configured. The distance d1′ between the exterior patterns223D arranged to be adjacent to the display area DA may be less than thedistance d2′ between the exterior patterns 223D arranged to be adjacentto the sensor area SA.

FIG. 14 is an enlarged view of region C of FIG. 13 and FIG. 15 is aschematic cross-sectional view of a display apparatus taken along lineIV-IV′ of FIG. 14 . In FIGS. 14 and 15 , reference numerals that are thesame as the reference numerals in FIGS. 5 and 7 denote the members thatare the same as the members in FIGS. 5 and 7 . Thus, their descriptionswill not be repeated.

Referring to FIG. 14 , the opposite electrode 223 may be arranged toextend to the non-display area NDA. The opposite electrode 223 mayinclude the first opposite electrode 223A, the second opposite electrode223B, and the third opposite electrode 223C. Thus, in the non-displayarea NDA, the first opposite electrode 223A, the second oppositeelectrode 223B, and the third opposite electrode 223C may be arranged.

The second opposite electrodes 223B and/or the third opposite electrodes223C may be arranged in the non-display area NDA outside the sensor areaSA. The transmission areas TA may be defined by distances between thesecond opposite electrodes 223B and the third opposite electrodes 223C.The second opposite electrodes 223B and the third opposite electrodes223C may be arranged to overlap and contact each other. Thus, the samevoltage may be applied to the second opposite electrodes 223B and thethird opposite electrodes 223C.

The first opposite electrodes 223A and/or the third opposite electrodes223C may be arranged in the non-display area NDA outside the displayarea DA. The first opposite electrodes 223A and the third oppositeelectrodes 223C may be arranged to overlap and contact each other. Thus,the same voltage may be applied to the first opposite electrodes 223Aand the third opposite electrodes 223C.

Exterior patterns 223D1, 223D2, and 223D3 arranged at the outermostportions in the first direction (the x-direction) may have differentshapes and may be arranged to be apart from each other by the distanced1′ or d2′. Thus the opposite electrode 223 may have an amorphoussaw-toothed shape. Alternatively, it may be understood that a side ofthe opposite electrode 223 includes the partially projecting exteriorpatterns 223D1, 223D2, and 223D3. For example, from a planarperspective, a side of the opposite electrode 223 may not have a linearshape.

The opposite electrode 223 may be electrically connected to the secondpower supply line 170 and may receive a second power voltage ELVSS (or acommon voltage).

Referring to FIG. 15 , a thin-film transistor t′ which may be includedin the scan driving circuit 120 (see FIG. 3 ) may be arranged betweenthe display area DA and the second power supply line 170. Theplanarization layer 117 and the pixel-defining layer 119 may be arrangedon the thin-film transistor T′. Thus, the thin-film transistor T1′ maybe arranged to be apart from the opposite electrode 223.

The second power supply line 170 may be arranged on the same layer as asource electrode or a drain electrode of the thin-film transistor T′.The second power supply line 170 may include the same material as thesource electrode or the drain electrode of the thin-film transistor T′.The planarization layer 117 may be arranged on the second power supplyline 170. Additionally, the planarization layer 117 may have a contacthole CNT′ exposing a portion of the second power supply line 170.

A connection wire CM arranged on the same layer and including the samematerial as the first pixel electrode 221 (see FIG. 7 ) may be arrangedon the planarization layer 117. The connection wire CM may contact thesecond power supply line 170 through the contact hole CNT′.

The pixel-defining layer 119 may be arranged on the connection wire CM,and the pixel-defining layer 119 may include a connection opening CHexposing a portion of the connection wire CM. A portion of the oppositeelectrode 223 may be arranged in the connection opening CH and maycontact the connection wire CM.

The opposite electrode 223 may include the first opposite electrodes223A, the second opposite electrodes 223B, and/or the third oppositeelectrodes 223C. Thus, there may be an overlapping area in which thefirst opposite electrodes 223A, the second opposite electrodes 223B,and/or the third opposite electrodes 223C overlap one another. Athickness of the opposite electrode 223 at the overlapping area may be agreater thickness than that of the same at an area in which the firstopposite electrodes 223A, the second opposite electrodes 223B, and/orthe third opposite electrodes 223C do not overlap one another.

The exterior pattern 223D1 arranged at the outermost portion of theopposite electrode 223 may be arranged to at least partially overlap thesecond power supply line 170. Also, a portion of the opposite electrode223 may be arranged to correspond to the contact hole CNT′.

FIG. 16 is a schematic plan view of a portion of a display apparatusaccording to another embodiment. In FIG. 16 , reference numerals thatare the same as the reference numerals in FIGS. 5 and 6 denote themembers that are the same as the members in FIGS. 5 and 6 . Thus, theirdescriptions will not be repeated.

Referring to FIG. 16 , the display apparatus, according to an embodimentmay include the display area DA and the sensor area SA including thetransmission area TA and may include a plurality of opposite electrodes223. The opposite electrodes 223 may include a plurality of firstopposite electrodes 223A′ arranged to correspond to the display area DAand a plurality of second opposite electrodes 223B′ arranged tocorrespond to the sensor area SA. Additionally, a shape of the pluralityof first opposite electrodes 223A′ may be different from a shape of theplurality of second opposite electrodes 223B′.

Also, the display apparatus may further include a plurality of thirdopposite electrodes 223C′ arranged to be adjacent to an edge of thedisplay area DA and the sensor area SA. For example, the third oppositeelectrodes 223C′ may be arranged between the first opposite electrodes223A′ and the second opposite electrodes 223B′.

According to the present embodiment, each of the first oppositeelectrodes 223A′ and the third opposite electrodes 223C′ may be arrangedto correspond to two pixel groups Pg and the second opposite electrodes223B′ may be arranged to correspond to one pixel group Pg. For example,it may be understood that the number of pixels to which one firstopposite electrode 223A′ corresponds may be about two times the numberof pixels to which one second opposite electrode 223B′ corresponds. Forexample, when the number of pixels included in one pixel group Pg isfour, one second opposite electrode 223B′ may be arranged to correspondto four pixels and one first opposite electrode 223A′ and one thirdopposite electrode 223C′ may be arranged to correspond to eight pixels.

According to the present embodiment, each of the first oppositeelectrodes 223A′ may have a shape of a first quadrangle with a firstwidth W1′ in the first direction (the x-direction). Each of the secondopposite electrodes 223B′ may have a shape of a second quadrangle with asecond width W2′ in the first direction (the x-direction), whereinprojections PT project at four vertexes of the second quadrangle. Here,the projections PT may be an area overlapping the second oppositeelectrode 223B′ adjacent thereto and may be smaller than the secondquadrangle.

In some embodiments, an area of one third opposite electrode 223C′ maybe greater than an area of one first opposite electrode 223A′. To thisend, in FIG. 14 , a third length L3′ of the third opposite electrode223C′ in the second direction may be greater than a first length L1′ ofthe first opposite electrode 223A′ in the second direction. Because thethird length L3′ is greater than the first length L1′, the thirdopposite electrode 223C′ arranged in the sensor area SA may overlap andcontact the first opposite electrode 223A′ and the second oppositeelectrode 223B′ at a vertex area. A third width W3′ in the firstdirection (the x-direction) is substantially the same as the first widthW1′ in the drawing. However, embodiments are not limited thereto. Forexample, the third width W3′ may be greater than the first width W1′.According to the present embodiment, the first length L1′ may be aboutone point eight to two times the second length L2, which is a centrallength of the second opposite electrode 223B in the second direction.

A distance d1 between first opposite electrodes 223A adjacent to eachother in the second direction (the y-direction) from among the firstopposite electrodes 223A may be much less than the length d2 of thetransmission area TA in the second direction (the y-direction). Forexample, the length d2 of the transmission area TA may be about five toten times the distance d1 (d1<<d2). In some embodiments, the distance d1may be about 10 um to about 20 um.

The first opposite electrodes 223A′ may be arranged in a zigzag shape inthe first direction. Accordingly, the total number of first oppositeelectrodes 223A′ and/or third opposite electrodes 223C′ contacting onefirst opposite electrode 223A′ may be four.

The third opposite electrodes 223C′ may be arranged in a zigzag shape inthe first direction. Accordingly, one third opposite electrode 223C′ maybe connected to an adjacent third opposite electrode 223C′ and the firstopposite electrode 223A′, or may contact the first opposite electrode223A′ and the second opposite electrode 223B′.

As the number of first opposite electrodes 223A′, second oppositeelectrodes 223B′, third opposite electrodes 223C′ contacting one firstopposite electrode 223A′ and one third opposite electrode 223C′ isincreased, a more uniform second power voltage may be provided to thedisplay area DA. Accordingly, a deviation of brightness in the displayarea DA may be decreased.

FIG. 17 illustrates a mask M2 for manufacturing the display apparatus ofFIG. 16 . In FIG. 17 , reference numerals that are the same as thereference numerals in FIG. 11 denote the members that are the same asthe members in FIG. 11 . Thus, their descriptions will not be repeated.

Referring to FIG. 17 , the mask M2, according to an embodiment, mayinclude a first mask opening 510A′ and the second mask opening 510B′having different shapes from each other. Also, the mask M2, according toan embodiment, may further include a third mask opening 510C′ having adifferent size from the first mask opening 510A′.

The first mask opening 510A′ may have a shape of a quadrangle with afirst mask width MW1′ in a first direction (an x-direction) and a firstmask length ML1′ in a second direction (a y-direction).

The third mask opening 510C′ may have a shape of a quadrangle with athird mask width MW3′ in the first direction (the x-direction) and athird mask length ML3′ in the second direction (the y-direction).

Here, the third mask length ML3′ may be greater than the first masklength ML1′. An area of the third mask opening 510C′ may be greater thanan area of the first mask opening 510A′. The third mask length ML3′ maybe equal to or greater than two times the second mask length ML2′ of thesecond mask opening 510B′. The first mask length ML1′ may be about 1.8times to about 2 times the second mask length ML2′ of the second maskopening 510B′.

The first mask opening 510A′, the third mask opening 510C′, and thesecond mask opening 510B′ may be sequentially arranged in the seconddirection (the y-direction).

The first mask opening 510A′ may be arranged to be apart from the thirdmask opening 510C′ by a first distance d1′. The third mask opening 510C′may be arranged to be apart from the second mask opening 510B′ by asecond distance d2′. Here, the second distance d2′ may be greater thanthe first distance d1′. In some embodiments, the second distance d2′ maybe about five to ten times the first distance d1′ (d2′>d1′).

The second mask openings 510B′ may further be arranged in a positive(+)y-direction to be apart from each other by the second distance d2′. Thefirst mask openings 510A′ may further be arranged in a negative(−)y-direction to be apart from each other by the first distance d1′.

The first mask opening 510A′ may be provided in a multiple number andthe first mask openings 510A′ may be serially arranged in the firstdirection (x-direction) to be apart from each other by a third distanced3′. The third mask opening 510C′ may be provided in a multiple numberand the third mask openings 510C′ may be serially arranged in the firstdirection (x-direction) to be apart from each other by the thirddistance d3′.

Here, the third distance d3′ may be less than the first mask width W1′.

The opposite electrode 223 according to the embodiment of FIG. 16 may bedeposited by primarily depositing the opposite electrode 223 by usingthe mask M2 according to the present embodiment and then secondarilydepositing the opposite electrode 223 by moving the mask M2 in the rightand upper or the left and lower direction by 45 degrees.

FIG. 18 is a plan view of a portion of a display panel 10′ according toanother embodiment.

Referring to FIG. 18 , the display panel 10′ may further include anopening area OA. Additionally, the sensor area SA may be disposed insidethe display area DA and may be surrounded by the display area DA.

The opening area OA may be an area below which a component 30 may bearranged. The opening area OA may be a transmission area through whichlight output from the component 30 to the outside or proceeding from theoutside toward the component 30 may be transmitted. According to anembodiment, when light is transmitted through the opening area OA, alight transmittance may be equal to or greater than about 50%. The lighttransmittance may be equal to or greater than about 70%, about 75%,about 80%, about 85%, or about 90%. The opening area OA may be an areain which a display element is not arranged not to provide an image.According to the present embodiment, the opening area OA may be disposedinside the display area DA, so that main pixels may be arranged tosurround the opening area OA.

The component 30 may also be arranged below the sensor area SA. Also,auxiliary pixels may be arranged in the sensor area SA. Thus, a certainimage may be provided in the sensor area SA.

In some embodiments, light transmittance of the opening area OA may begreater than a light transmittance of the sensor area SA. Accordingly,the component 30, such as a camera, etc., which may have a high lighttransmittance, may be arranged in the opening area OA, and a sensorconfigured to sense infrared rays may be arranged in the sensor area SA.

As described above, according to the one or more of the aboveembodiments, in the display apparatus, the pixel portion, and thetransmission area having improved light transmittance may be arranged inthe sensor area SA corresponding to the component, such as the sensor,etc. Thus, an environment for the operation of the component may begenerated, while an image may be realized in the area overlapping thecomponent.

Thus, the display apparatus having various functions and improvedquality may be provided.

It should be understood that embodiments described herein should beconsidered in a descriptive sense only and not for purposes oflimitation. Descriptions of features or aspects within each embodimentshould typically be considered as available for other similar featuresor aspects in other embodiments. While one or more embodiments have beendescribed with reference to the figures, it will be understood by thoseof ordinary skill in the art that various changes in form and detailsmay be made therein without departing from the spirit and scope asdefined by the following claims.

What is claimed is:
 1. A method of manufacturing a display apparatusincluding a display area and a sensor area, wherein the sensor areaincludes a transmission area, the method comprising: aligning a mask tocorrespond to a substrate, wherein an edge of the substrate extends in afirst direction; performing a first operation of depositing a portion ofan opposite electrode on the substrate using the mask; and performing asecond operation of depositing another portion of the opposite electrodeby moving the mask in a third direction at an angle between the firstdirection and a second direction perpendicular to the first direction.2. The method of claim 1, wherein the mask includes one or more firstmask openings and one or more second mask openings, and a shape of eachof the one or more first mask openings is different from a shape of eachof the one or more second mask openings.
 3. The display apparatus ofclaim 2, wherein each of the one or more first mask openings has theshape of a first quadrangle with a first width, and each of the one ormore second mask openings has the shape of a second quadrangle with asecond width, wherein the second quadrangle has an expansion holeextending from each of four vertexes of the second quadrangle.
 4. Themethod of claim 1, wherein the mask includes one or more third maskopenings between one or more first mask openings and one or more secondmask openings, and an area of each of the one or more third maskopenings is greater than an area of each of the one or more first maskopenings.
 5. The method of claim 1, wherein one or more first maskopenings are arranged to be apart from each other by a first distance inthe second direction, and one or more second mask openings are arrangedto be apart from each other by a second distance in the seconddirection, wherein the first distance is less than the second distance.6. The method of claim 5, wherein the second distance is 5 to 10 timesthe first distance.